Memory Cells, Methods Of Forming Memory Cells, And Methods Of Forming Programmed Memory Cells

ABSTRACT

In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent both the source region and the drain region. Some embodiments include methods of programming a memory cell that has phase change material adjacent a drain region. An inversion layer is formed within the channel region adjacent the gate dielectric, with the inversion layer having a pinch-off region within the phase change material adjacent the drain region. Hot carriers (for instance, electrons) within the pinch-off region are utilized to change a phase within the phase change material.

TECHNICAL FIELD

Memory cells, methods of forming memory cells, and methods of formingprogrammed memory cells.

BACKGROUND

Semiconductor devices are commonly utilized for data storage andprocessing. The data storage may utilize an array of memory devices.Some memory devices are particularly well-suited for long-term storageof data, while others are better suited for rapid reading and writing(in other words, rapid access).

Among the memory devices that are particularly well-suited for rapidaccess are dynamic random access memory (DRAM) devices. A traditionalDRAM unit cell may include a transistor in combination with a capacitor.Voltage stored in the capacitor represents digital bits of information.

The capacitors of the DRAM devices leak stored charge. Accordingly,electric power is supplied to the capacitors in frequent refresh cyclesto avoid dissipation of stored charge, and consequent loss ofinformation. Memory devices that utilize frequent refresh are oftenreferred to as volatile memory devices.

Another type of memory device is a so-called nonvolatile memory device.Nonvolatile memory devices do not need frequent refresh cycles topreserve stored information. Accordingly, nonvolatile memory devices mayconsume less power than volatile memory devices; and, unlike volatilememory devices, may operate in environments where power is not alwayson. Among the applications in which nonvolatile memory devices mayprovide particular advantages are mobile device applications where poweris supplied by batteries (for instance, cell phones, laptops, etc.),and/or and applications where power may be turned off during retentionof data (for instance, control systems of automobiles, military devices,etc.).

An advantage of conventional DRAM devices is the speed with which datamay be written to and read from the memory devices. It would bedesirable to develop a nonvolatile memory device which may be accessedwith speeds approaching, or even exceeding, the speeds of conventionalDRAM devices.

A continuing goal of semiconductor fabrication is to reduce the amountof semiconductor real estate consumed by various components, to therebyincrease integration. It would be desirable to develop memory deviceswhich may be highly integrated, and which may be readily verticallystacked in order to conserve semiconductor real estate.

Phase change materials are a class of materials that change phase uponbeing exposed to thermal and/or other conditions. Phase change materialsmay be utilized in memory devices as data storage elements.Specifically, when the phase change materials are in one phase they maybe considered to correspond to one binary digit (i.e., either a “0” or a“1”), and when in another phase they may be considered to correspond tothe other binary digit. Thus, phase change materials may be utilized tostore a data bit. It would be desired to develop improved methods forincorporating phase change materials into memory devices, and to developimproved devices that utilize phase change materials.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic, cross-sectional view of a portion of asemiconductor construction illustrating an embodiment of a memorydevice.

FIG. 2 is a view of the memory device of FIG. 1 shown during aprogramming operation.

FIG. 3 is a diagrammatic, cross-sectional view of a portion of asemiconductor construction illustrating another embodiment of a memorydevice.

FIG. 4 is a diagrammatic, cross-sectional view of a portion of asemiconductor construction illustrating another embodiment of a memorydevice.

FIG. 5 is a diagrammatic, cross-sectional view of a portion of asemiconductor construction illustrating another embodiment of a memorydevice.

FIGS. 6-9 illustrate various programming stages for an embodiment of amemory device.

FIGS. 10-15 illustrate various processing stages for forming anembodiment of a memory device.

FIGS. 16-18 illustrate various processing stages for forming anembodiment of a memory device.

FIGS. 19-22 illustrate various processing stages for forming anembodiment of a memory device.

FIGS. 23 and 24 illustrate a cross-sectional view and top view,respectively, of a portion of a memory array at a processing stage inaccordance with an embodiment. FIG. 23 is along the line 23-23 of FIG.24.

FIGS. 25 and 26 illustrate the portion of the memory array of FIGS. 23and 24 at a processing stage subsequent to that of FIGS. 23 and 24. FIG.25 is along the line 25-25 of FIG. 26, and FIG. 26 is along the line26-26 of FIG. 25.

FIGS. 27-29 illustrate plan views for forming contacts to source anddrain regions of memory cells in accordance with example embodiments.

FIG. 30 is a diagrammatic, cross sectional view of a portion of asemiconductor construction illustrating an example embodiment stackingarrangement of memory device arrays.

FIG. 31 is a diagrammatic view of a computer embodiment.

FIG. 32 is a block diagram showing particular features of themotherboard of the FIG. 31 computer embodiment.

FIG. 33 is a high level block diagram of an electronic systemembodiment.

FIG. 34 is a simplified block diagram of a memory device embodiment.

FIGS. 35-39 illustrate various processing stages for forming anembodiment of a memory device.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, hot electron injection and impact ionization neardrain regions are utilized to create localized heating, which in turn isutilized to induce a phase change in phase change material. The phasechange material may be any suitable material, including, for example,one or more of GeTe, InSe, SbTe, GaSb, InSb, AsTe, AlTe, GeSbTe, TeGeAs,InSbTe, TeSnSe, GeSeGa, BiSeSb, GaSeTe, SnSbTe, InSbGe, TeGeSbS,TeGeSnO, TeGeSnAu, PdTeGeSn, InSeTiCo, GeSbTePd, GeSbTeCo, SbTeBiSe,AgInSbTe, GeSbSeTe, GeSnSbTe, GeTeSnNi, GeTeSnPd, and GeTeSnPt; withsuch materials being described in terms of chemical constituents insteadof particular stoichiometries. Example stoichiometries are Ge₂Sb₂Te₅(which is a material commonly referred to as GST), and Sb₂Te₃.

The localized heating can take advantage of a phenomenon called hotcarrier injection, which is often considered a problem in the prior art.When voltage is applied to a field effect transistor (FET), an inversionlayer is created across the channel region of the transistor to enablecurrent flow between the source and drain. If excess voltage is appliedto the drain of the transistor, a region of the inversion layer adjacentthe drain will be deprived of minority carriers. Hot carrier injectioninto such region may occur, creating electron-hole pairs due to impactionization.

If the source and drain regions are n-type majority doped (i.e., if theFET is an NMOS device), the hot carriers will be electrons. If thechannel region consists of material having high thermal conductivity,the heat generated by hot electrons may be dispersed to alleviate aself-heating effect. This is a perceived advantage of bulk silicon inthe prior art. The bulk silicon has a relatively high thermalconductivity throughout, and accordingly can disperse heat generated byhot electrons. The self-heating may lead to thermally-induced problems,however, with the thin silicon layer utilized in silicon-on-insulatorconstructions.

Phase change materials tend to have relatively poor thermal conductivityas compared to silicon, germanium and other semiconductor materialsconventionally utilized in transistor channel regions. In someembodiments, this relatively poor thermal conductivity is takenadvantage of to induce localized self-heating and thereby heat a regionproximate the drain of an FET. The localized self-heating is createdthrough hot carrier injection and impact ionization. The localizedself-heating is utilized to enhance phase change within the phase changematerial to assist in changing the material between crystalline andamorphous states during programming of a memory cell (for instance, aphase change random access memory (PCRAM)). In some embodiments, thelocalized self-heating created through hot carrier injection and impactionization may be utilized in the absence of additional heating toinduce a desired phase change; and the PCRAM may thus be considered aself-heating device. In some example embodiments, the localizedself-heating may be utilized to induce a phase change in a PCRAM whilethe PCRAM is at about room temperature (about 22° C.).

Several embodiments of phase-change-material-containing memory cells aredescribed below. Some of the embodiments may be considered nonvolatiledevices, and yet may be read as fast as DRAM, and in some applicationsmay be written to as fast a DRAM.

The specific example embodiments discussed below utilize n-typesource/drain regions and a p-type channel, and accordingly it iselectrons that are injected near the drain. It is noted, however, thatin other embodiments it can be p-type source/drain regions, and ann-type channel, and then it will be holes that are injected. However,hole injection may be undesirably much slower than electron injection.

An example embodiment is described with reference to FIGS. 1 and 2.

Referring to FIG. 1, a semiconductor construction 8 includes a substrate12 supporting a memory cell 10. The memory cell contains a FET 14.

The substrate may consist of one or more of the phase change materialsdiscussed above, and in some embodiments may consist of GST doped withp-type dopant.

The FET 14 comprises a transistor gate 16 over a gate dielectric 18, andcomprises electrically insulative spacers 19 along the opposingsidewalls of the transistor gate. The FET further comprises a sourceregion 20 adjacent one side of the transistor gate, and a drain region22 adjacent an opposing side of the transistor gate from source region.

The transistor gate 16 may comprise one or more electrically conductivecompositions, and may, for example, comprise one or more of metal (forinstance, tungsten, titanium, etc.), metal-containing compositions (forinstance, metal silicide, metal nitride, etc.), and conductively-dopedsemiconductor materials (for instance, conductively-doped silicon,germanium, etc.); and may comprise an electrically insulative cap overthe conductive material.

The gate dielectric 18 may comprise one or more electrically insulativecompositions; and may, for example, comprise silicon dioxide and/or anyof various high-k compositions (with high-k compositions beingcompositions having a dielectric constant greater than that of silicondioxide).

The sidewall spacers 19 may comprise one or more electrically insulativecompositions; and may, for example, comprise one or more of silicondioxide, silicon nitride, and silicon oxynitride.

The source/drain regions 20 and 22 may correspond to regions were dopantis implanted into substrate 12. Alternatively, the source/drain regionsmay correspond to Schottky junctions where metal is formed along anupper surface of the substrate, or within recesses extending into thesubstrate.

If the source and drain regions are implant regions, the implant regionsmay be either majority n-type doped or majority p-type doped. However,for the reasons discussed above, it may be advantageous for the implantregions to be majority n-type doped so that hot electron injection isutilized instead of hot hole injection. The source and drain regions mayextend to any suitable depth within substrate 12; and may, for example,extend to a depth of from about 10 nanometers (nm) to about 200 nm. Ifthe source and drain regions are formed by implanting n-type dopant intophase change material, the dopant may correspond to, for example, one orboth of Bi and Pb.

A channel region 24 is under gate dielectric 18, and extends betweensource region 20 and drain region 22. The channel region may be dopedwith a threshold voltage dopant.

Referring to FIG. 2, construction 8 is illustrated at a stage in whichvoltage is applied to gate 16 and drain 22. Such creates an inversionlayer 26 within channel 24; with a boundary of the inversion layer beingdiagrammatically illustrated by a dashed line 27. The inversion layer isshaped as a wedge, and specifically is thicker near source 20 than neardrain 22. The inversion layer may have a maximum thickness (i.e., depthunder the gate dielectric) of a few nanometers. In the shown embodiment,the inversion layer becomes so thin proximate drain 22 that a pinch-offregion 28 (i.e., a region where carriers are depleted) is formedproximate the drain.

Hot carrier injection and impact ionization (specifically injection ofhot electrons in the shown embodiment) occurs within the pinch-offregion to increase a temperature of phase change material 12 within thepinch-off region. The increased temperature of phase change material 12within the pinch-off region creates a region 30 of the phase changematerial that has a different phase than the remainder of the phasechange material within the channel region. Region 30 is illustrated withcross-hatching to diagrammatically distinguish region 30 from theremainder of phase change material 12. Such cross-hatching is notutilized to indicate a particular phase within region 30 relative to theremainder of phase change material 12.

The phase change material of region 30 is utilized as a programmablevolume of memory cell 8. Specifically, if region 30 is in an amorphousphase, it impedes current flow through channel region 24 relative towhen region 30 is in a crystalline phase. When the programmable volumeis in an amorphous phase, the memory cell corresponds to one memorystate (for instance, the state designated as “0” of a data bit), andwhen the programmable volume is in a crystalline phase, the memory cellcorresponds to a different memory state (for instance, the statedesignated as “1” of the data bit).

The particular phase created within region 30 may be controlled bycontrolling the temperature within region 30, and the time that region30 is exposed to such temperature. For instance, if region 30 is exposedto a temperature above the effective melting temperature, the regionwill become amorphous if it is exposed for sufficient time (which may be10 nanoseconds in some embodiments), and quenched quickly to roomtemperature with sufficient cooling rate. If region 30 is exposed to atemperature that is above the crystallization temperature and below theeffective melting temperature, the region will become crystalline if itis exposed for sufficient time (which may be about 30 nanoseconds insome embodiments). An advantage of programming the phase change materialmay be that if the exposure time is too long, there will not be a changeto an undesired memory state. Rather, the memory states may correspondto equilibriums that, once reached, will be maintained as long as thetemperature remains within an appropriate regime.

The temperature that region 30 is exposed to may be correlated tovoltages applied at the source, gate and drain of FET 14, andaccordingly memory cell 8 may be programmed to a desired memory statethrough application of appropriate voltages to the various components ofthe FET.

Example programming that may be used in some embodiments is as follows.

To program a localized amorphous region (i.e., to RESET a PCRAM to state“0”) the following voltages may be applied: if a threshold voltage(V_(t)) of 0.5 volts; then a gate voltage (V_(g)) of 1 volt, a drainvoltage (V_(d)) of 2.5 volts, and a source voltage (V_(s)) of 0 volt.

The voltage conditions of the RESET may be maintained for a duration ofat least about 10 nanoseconds to fully convert a programmable volume ofphase change material to an amorphous state.

To program an amorphous region to a crystalline region (i.e., to SET aPCRAM to state “1”) the following voltages may be applied: if athreshold voltage (V_(t)) of 0.5 volts; then a gate voltage (V_(g)) of 1volt, a drain voltage (V_(d)) of 1.8 volts, and a source voltage (V_(s))of 0 volt.

The voltage conditions of the SET may be maintained for a duration of atleast about 30 nanoseconds (in some embodiments, the duration may befrom about 30 nanoseconds to about 100 nanoseconds) to fully convert aprogrammable volume of phase change material from an amorphous state toa crystalline state.

To read the PCRAM and ascertain if the programmable volume is anamorphous state or a crystalline state (i.e., to determine if the PCRAMis in the SET or RESET state), the following voltages may be applied: ifa threshold voltage (V_(t)) of 0.5 volts; then a gate voltage (V_(g)) of0.8 volts, a drain voltage (V_(d)) of 0.2 volts, and a source voltage(V_(s)) of 0 volt.

The RESET state will have lower current flow through the channel thanthe SET state during the reading of the PCRAM due to the amorphousregion of the phase change material impeding current flow more than thecrystalline state of the phase change material.

FIGS. 1 and 2 illustrate one example of a memory cell comprising phasechange material proximate the drain region of a FET. FIGS. 3-5illustrate three more examples of memory cells comprising phase changematerial proximate the drain region of a FET. In referring to FIGS. 3-5,similar numbering is used as was utilized to describe FIGS. 1 and 2,where appropriate.

Referring to FIG. 3, a semiconductor construction 40 comprises asubstrate 42 analogous to a semiconductor-on-insulator construction.Specifically, substrate 42 comprises a base 44 supporting an insulator46 (specifically, an electrically insulative material), and comprisesphase change material 12 over the insulator. Base 44 may correspond to,for example, a monocrystalline silicon wafer. Insulator 46 may, forexample, comprise, consist essentially of, or consist of silicondioxide. The phase change material 12 may comprise any of thecompositions discussed above.

A memory cell 48 is supported by phase change material 12. The memorycell comprises a FET 14 containing the gate 16, dielectric material 18,spacers 19, source 20 and drain 22 discussed above. In the shownembodiment, the source 20 and drain 22 extend entirely across phasechange material 12 to reach insulator 46. In other embodiments, thesource and drain may extend only partially across the thickness of phasechange material 12.

The memory cell 48 may be operated similarly to the memory cell 10discussed above with reference to FIGS. 1 and 2.

The memory cells of FIGS. 1-3 have phase change material extendingthroughout an entirety of a channel region. In other embodiments, hybridconstructions may be formed in which a portion of a channel regioncomprises traditional semiconductor materials (i.e., non-phase changematerials; such as silicon, germanium, etc. in non-phase change form),and another portion of the channel region comprises phase changematerial. The portion comprising traditional semiconductor material maybe all of the channel region except for a segment where a pinch-offregion will form proximate the drain.

An example hybrid construction is shown in FIG. 4. Specifically, FIG. 4shows a construction 50 that comprises a base 52 having a volume ofphase change material 12 extending therein. The base 52 may, forexample, comprise, consist essentially of, or consist of non-phasechange semiconductor material (for instance, bulk monocrystallinesilicon). The phase change material 12 may comprise any of the phasechange material compositions discussed above.

A memory cell 54 is supported by base 52. Memory cell 54 comprises a FET14 containing the gate 16, dielectric material 18, spacers 19, sourceregion 20 and drain region 22 discussed above; and comprises at leastsome of the phase change material 12 within the channel region 24. Inthe shown embodiment, the channel region 24 primarily comprisesnon-phase change semiconductor material of base 52 (i.e., comprises morethan 50% non-phase change semiconductor material, by volume) andcomprises the phase change material only adjacent the drain region 22.In some embodiments, the channel may have a length from the sourceregion to the drain region of from about 15 nm to about 100 nm, and thephase change material 12 may be contained within a region having alength within the channel region of from about 5 nm to about 30 nm.

The memory cell 54 may be operated similarly to the memory cell 10discussed above with reference to FIGS. 1 and 2.

Another example hybrid construction is shown in FIG. 5. FIG. 5illustrates a construction 60 that comprises a substrate 62 analogous tothe substrate 42 discussed above with reference to FIG. 3. Specifically,substrate 62 comprises the base 44 supporting an insulator 46. However,in contrast to FIG. 3, the substrate 62 comprises a layer of traditionalsemiconductor material (for instance, Si or Ge) 64 over insulator 46,and comprises phase change material 12 only within a small region ofmaterial 64.

A memory cell 66 is supported by base 62. Memory cell 66 comprises a FET14 containing the gate 16, dielectric material 18, spacers 19, sourceregion 20 and drain region 22 discussed above; and comprises at leastsome of the phase change material 12 within the channel region 24extending between the source and drain regions. In the shown embodiment,the source region 20 and drain region 22 extend entirely acrosssemiconductor material 64 to reach insulator 46. In other embodiments,the source and drain regions may extend only partially across thethickness of semiconductor material 64. In the shown embodiment, thechannel region 24 primarily comprises non-phase change semiconductormaterial of layer 64, and comprises the phase change material 12 onlyadjacent the drain region 22 (with the material 12 being directlyadjacent the drain region—i.e., touching the drain region—in the shownembodiment).

The memory cell 66 may be operated similarly to the memory cell 10discussed above with reference to FIGS. 1 and 2.

The memory cells of FIGS. 1-5 are described as being configured to storea single data bit. Specifically, the memory cells comprise a singleprogrammable volume of phase change material proximate a FET drain, andutilize two interchangeable states of the phase change material to storea data bit. In other embodiments, a memory cell may be configured tocomprise two programmable volumes of phase change material within asingle FET. Furthermore, the orientation of the regions 20 and 22 ofFIGS. 1-5 as a source and drain, respectively, may be reversed bychanging a direction of current flow through such regions. FIGS. 6-9illustrate a method of utilizing the construction 8 of FIGS. 1 and 2 tostore more than just one of two memory states (and specifically to storeone of four memory states, or in other words two data bits). Inreferring to FIGS. 6-9, similar numbering will be used as is used aboveto describe FIGS. 1 and 2, where appropriate. An exception is thatregions 20 and 22 will be referred to as source/drain regions, ratherthan as a source and a drain, to indicate that the status of theindividual regions as either a source or a drain will change duringprogramming of the memory cell. The status of the individualsource/drain regions as either a source or a drain may also changeduring reading of information from the memory cell.

FIG. 6 shows construction 8 at a programming stage in which phase changematerial 12 has a single homogeneous crystalline phase across anentirety of channel region 24. Such crystalline phase may be, forexample, a low resistivity polycrystalline phase (as opposed to a highresistivity amorphous phase), and accordingly high current will flowacross the channel region during reading of the FET regardless ofwhether source/drain region 20 is the source or the drain of the FET.The programming state of FIG. 6 may be considered a [1,1] programmingstate of the memory cell.

FIG. 7 shows construction 8 after the construction is subjected toprogramming voltage which converts a region 70 of the phase changematerial proximate source/drain region 22 into an amorphous phase(diagrammatically illustrated with cross-hatching in FIG. 7). Theprogramming may be conducted by utilizing source/drain region 22 as adrain to create localized self heating through hot carrier injection andimpact ionization proximate source/drain region 22. Amorphous region 70will impede current flow across channel 24 during reading. The influenceof amorphous region 70 on current flow during the reading will be morepronounced when region 22 is a source than when region 22 is a drain.Accordingly, when region 20 is a source and region 22 is a drain, therewill be relatively high current flow through channel 24; and when region22 is a source and region 20 is a drain there will be relatively lowcurrent flow through channel 24. The programming state of FIG. 7 may beconsidered a [1,0] programming state of the memory cell. The region 70may be considered to be a first volume of programmable material.

FIG. 8 shows construction 8 after the construction is subjected toprogramming voltage which converts a region 72 of the phase changematerial proximate source/drain region 20 into an amorphous phase. Theprogramming may be conducted by utilizing source/drain region 20 as adrain to create localized self heating through hot carrier injection andimpact ionization proximate source/drain region 20. Amorphous region 72will impede current flow across channel 24 during reading. The influenceof amorphous region 72 on current flow during the reading will be morepronounced when region 20 is a source than when region 20 is a drain.Accordingly, when region 20 is a source and region 22 is a drain, therewill be relatively low current flow through channel 24; and when region22 is a source and region 20 is a drain there will be relatively highcurrent flow through channel 24. The programming state of FIG. 7 may beconsidered a [0,1] programming state of the memory cell. The region 72may be considered to be a second volume of programmable material.

FIG. 9 shows construction 8 after the construction is subjected toprogramming voltages which convert both of regions 70 and 72 of thephase change material into amorphous phases. The programming may beconducted by following the programming state of FIG. 7 with programmingsuitable to form region 72 of FIG. 8; or by following the programmingstate of FIG. 8 with programming suitable to form region 70 of FIG. 7.Amorphous regions 70 and 72 will impede current flow across channel 24during reading, regardless of which of source/drain regions 70 and 72 isa source and which is a drain. The programming state of FIG. 9 may beconsidered a [0,0] programming state of the memory cell. The readinguses a smaller gate voltage and thus will be significantly affected bythe state of the programmable volume, whereas the programming uses amuch larger gate voltage which may fully invert the programmable volumeand may minimize the effect of the state of the programmable volume.

Example programming that may be used in some embodiments to program adual-bit (i.e., four-state) device of the type described in FIGS. 6-9 isas follows.

To program a localized amorphous region (i.e., to RESET) the followingvoltages may be applied: if a threshold voltage (V_(t)) of 0.5 volts;then a gate voltage (V_(g)) of 2 volts, a drain voltage (V_(d)) of 3volts, and a source voltage (V_(s)) of 0 volt.

To program an amorphous region to a crystalline region (i.e., to SET)the following voltages may be applied: if a threshold voltage (V_(t)) of0.5 volts; then a gate voltage (V_(g)) of 2 volts, a drain voltage(V_(d)) of 2.4 volts, and a source voltage (V_(s)) of 0 volt.

To read the PCRAM the following voltages may be applied: if a thresholdvoltage (V_(t)) of 0.5 volts; then a gate voltage (V_(g)) of 0.8 volts,a drain voltage (V_(d)) of 0.6 volts, and a source voltage (V_(s)) of 0volt.

In some embodiments, the reading of one bit of the two-bit PCRAM may bealmost independent of the reading of the other bit of the two-bit PCRAMdue to the pinch-off effect.

Any suitable processing method may be utilized to form memory cells ofthe various embodiments. An example method which may be utilized to formthe memory cell of FIG. 4 is described with reference to FIGS. 10-15.Similar numbering will be utilized to describe FIGS. 10-15 as is usedabove to describe FIG. 4, where appropriate.

Referring to FIG. 10, construction 50 is shown at a processing stageprior to that of FIG. 4. A patterned gate stack 80 is formed over asemiconductor base 52. The patterned gate stack comprises gate material16 over gate dielectric 18, and may correspond to a line extending intoand out of the page relative to the shown cross-sectional view.

Referring to FIG. 11, masking material 82 is formed across base 52 andover gate stack 80. Masking material 82 may comprise any suitablecomposition, and may, for example, comprise, consist essentially of, orconsist of photolithographically-patterned photoresist.

Patterned masking material 82 defines an opening 84 that extends throughthe patterned masking material and to an upper surface of base 52.

Referring to FIG. 12, opening 84 is extended into base 52 to form arecess 86 within a region of base 52.

Referring to FIG. 13, phase change material 12 is deposited within therecess. In the shown embodiment, the phase change material fills therecess. The phase change material may be provided to a sufficient amountto fill the recess by utilizing a timed deposition of the phase changematerial. Alternatively, the phase change material may provided to anamount that overfills the recess, and then excess phase change materialmay be removed with an etch.

Referring to FIG. 14, masking material 82 (FIG. 13) is removed. If theamount of phase change material formed within the recess overfills therecess, the excess phase change material may be removed with an etchoccurring before or after removal of the masking material 82.

Referring to FIG. 15, spacers 19 are formed along opposing sidewalls ofgate stack 80. The spacers may be formed by depositing a layer of spacermaterial over base 52 and across the line 80, and then anisotropicallyetching the spacer material. The spacers 19 and gateline 80 are used asa mask during implant of dopant into base 52, with the implanted dopantforming source/drain regions 20 and 22.

The gateline 80 comprises a transistor gate of a FET 10. The FETincludes a channel region 24 extending between source/drain regions 20and 22, with such channel region extending across a single segment ofphase change material 12. Thus, the memory cell of FIG. 15 is configuredto store one of two states, (i.e., to store a single bit).

Another example method which may be utilized to form the memory cell ofFIG. 4 is described with reference to FIGS. 35-39. Similar numberingwill be utilized to describe FIGS. 35-39 as is used above to describeFIGS. 4 and 10-15, where appropriate.

Referring to FIG. 35, construction 50 is shown at a processing stageprior to that of FIG. 4. A patterned gate stack 80 is formed over asemiconductor base 52. The patterned gate stack comprises materials 13and 15 over gate dielectric 18, and may correspond to a line extendinginto and out of the page relative to the shown cross-sectional view. Thematerial 13 may correspond to an insulative cap (for instance, a capcomprising silicon nitride), and the material 15 may correspond to oneor more electrically conductive materials.

A pair of sidewall spacers 19 are along the opposing sidewalls of thegate stack.

A sacrificial material 81 is formed to protect a portion of base 52 andto extend partially across gate stack 80.

Referring to FIG. 36, construction 50 is exposed to an etch whichselectively removes material of base 52 relative to material of spacers19 and relative to material 13. In some embodiments, base 52 consistsof, or consists essentially of, silicon; while spacers 19 and material13 consist essentially of, or consist of, silicon nitride. The etchforms an opening 83 extending into base 52. The etch undercuts one ofthe spacers 19 so that the opening 83 extends under such spacer.Although the opening 83 appears to leave the right spacer 19 unsupportedin the cross-sectional view of FIG. 36, the spacer would extend beyondthe opening in a direction orthogonal to the cross-section of FIG. 36(i.e., a direction extending into and out of the page) so that some ofthe spacer remains supported by base 52.

Referring to FIG. 37, phase change material 12 is deposited withinopening 83, and then anisotropically etched so that the phase changematerial remains only under the right spacer 19 in the shown view.

Referring to FIG. 38, semiconductor material 85 is epitaxially grownwithin opening 83 to fill the opening. The epitaxially-grownsemiconductor may, for example, comprise, consist essentially of, orconsist of monocrystalline silicon.

Referring to FIG. 39 dopant is implanted into base 52 and epitaxiallygrown material 85 to form source/drain regions 20 and 22.

Similar processing to that of FIGS. 10-15, or FIGS. 35-39, may beutilized to form a memory cell analogous to that of FIGS. 6-9, andconfigured to store, for example, two bits of information. An exampleprocess which may be utilized to form a memory cell configured to storetwo bits of information is described with reference to FIGS. 16-18. Inreferring to FIGS. 16-18, similar numbering will be used as is used todescribe FIGS. 10-15, where appropriate.

FIG. 16 shows the construction 50 of FIG. 10 at a processing stageanalogous to that of FIG. 11. The patterned masking material 82 has beenformed at the processing stage of FIG. 16. However, in contrast to theembodiment of FIG. 1, the patterned masking material has two openings 90and 92 extending therethrough, rather than the single opening 84 of FIG.11; and the patterned masking material is not over the line 80 (althoughit could be over the line 80 in other embodiments).

Referring to FIG. 17, openings 90 and 92 are extended into base 52 toform recesses within the base, and phase change material 12 is thendeposited within the recesses. In the shown embodiment, the phase changematerial fills the recesses. The phase change material 12 forms a firstprogrammable volume 91 within base 52 on one side of the gateline 80,and forms a second programmable volume 93 within base 52 on an opposingside of the gateline from the first programmable volume.

Referring to FIG. 18, patterned masking material 82 (FIG. 17) isremoved. Subsequently, spacers 19 are formed along opposing sidewalls ofgate stack 80, and then source/drain regions 20 and 22 are formed withinbase 52. The spacers 19 are directly over (i.e., are vertically alignedwith) the first and second programmable volumes 91 and 93.

The construction of FIG. 18 comprises a memory cell 10 having a FETchannel region 24 that extends across a pair of phase change regions.The construction of FIG. 18 may be utilized analogously to theconstruction of FIGS. 6-9 to store two bits of data.

Another example process which may be utilized to form a memory cellconfigured to store two bits of information is described with referenceto FIGS. 19-22. In referring to FIGS. 19-22, similar numbering will beused as is used to describe FIGS. 10-15, where appropriate.

FIG. 19 shows construction 50 of FIG. 10 at a processing stagesubsequent to that of FIG. 10. The construction comprises gateline 80over base (or substrate) 52, and comprises source/drain regions 20 and22 extending into base 52. The construction further comprises a pair ofspacers 95 along opposing sidewalls of the gateline, and comprisesdielectric material 82 over the base 52 beside the spacers. The spacerseach include a material 99 vertically sandwiched between a pair ofstructures comprising a material 97. The material 99 is selectivelyremovable relative to the material 97. For instance, in some embodimentsone of the materials 97 and 99 may consist of silicon dioxide and theother may consist of silicon nitride. Material 99 may be referred to asa sacrificial material and material 97 may be referred to asnon-sacrificial material. Dielectric material 82 may be a passivationfor regions 20 and 22, and/or may be a sacrificial material.

Referring to FIG. 20, sacrificial material 99 (FIG. 19) is selectivelyremoved relative to non-sacrificial material 97 to form openingsextending to base 52.

Referring to FIG. 21, an etch of base 52 is conducted through theopenings to form recesses within the base 52; and phase change material12 is then deposited within the recesses. The phase change material 12forms a first programmable volume 91 within base 52 on one side of thegateline 80, and forms a second programmable volume 93 within base 52 onan opposing side of the gateline from the first programmable volume.

Referring to FIG. 22, spacer material 98 is formed over programmablevolumes 91 and 93. In some embodiments, spacer material 98 may consistof phase change material 12 and may be formed at the processing stage ofFIG. 21. Thus, phase change material 12 may be formed with the recess ofFIG. 21, and then utilized to fill the openings between structures 97;and accordingly the structure 98 of FIG. 22 may be phase change materialhaving the same composition as the material 12. In other embodiments,material 98 may be a material other than phase change material, and maythus have a different composition than material 12.

The embodiment of FIGS. 19-22 forms the source/drain regions 20 and 22prior to forming programmable volumes 91 and 93. In other embodiments,the source/drain regions may be formed after forming the programmablevolumes.

The memory cells described above may be incorporated into memory arrays.FIGS. 23 and 24 illustrate a cross-sectional side view andcross-sectional top view, respectively, of a portion of a memory array100 comprising a plurality of memory cells of the type described inFIGS. 6-9. More specifically, the memory array comprises a plurality ofmemory cells 102, 104, 106, 108, 110, 112, 114, 116, and 118 formedacross phase change material 12.

The memory cells are along gatelines 120, 122 and 124. The gatelinescomprise stacks of gateline material 16 over dielectric material 18.Spacers 19 are shown extending along opposing sidewalls of thegatelines.

Source regions 132 and drain regions 134 are formed within phase changematerial 12 as part of memory cells 102, 104, 106, 108, 110, 112, 114,116, and 118. The source regions will change to drain regions, and thedrain regions to source regions, during programming of the memory cells(as discussed with reference to FIGS. 6-9). Accordingly, all of theregions 132 and 134 may be generically referred to as source/drainregions. However, there will be two distinct sets of regions at anyprogramming stage, with one of the sets being source regions and theother being drain regions. Regions 132 are referred to as being sourceregions and regions 134 as drain regions to provide an example of oneprogramming stage.

Each memory cell may comprise an area of 4F², where “F” is a minimumfeature size of a process utilized to form the memory cells.

The memory cell array 100 comprises columns and rows. The columns arealong the gatelines (with an example column comprising the memory cells102, 108, and 114 along gateline 120); and the rows extend substantiallyorthogonally to the columns (with an example row of memory cellscorresponding to the memory cells 108, 110 and 112). Isolation material130 is provided within phase change material 12 to electrically isolatememory cells of one row from the memory cells of adjacent row.

The construction of FIGS. 23 and 24 may be formed utilizing any suitableprocessing. In some embodiments, the construction may be formed bydeposition of phase change material (for instance, p-type backgrounddoped GST or p-type background doped SeInSb) over a semiconductorsubstrate (for instance, a monocrystalline silicon wafer), followed byprovision of isolation material 130 utilizing shallow trench isolationtechnologies. Gate dielectric 18 and gate material 16 may then bedeposited, and subsequently patterned into the gatelines utilizing a dryetch. Spacers 19 may then be formed along sidewalls of the gatelines.Next, n-type dopant may be implanted to form the source/drain regions132 and 134, and/or metal may be deposited to form Schottky barriers ofthe source/drain regions. Additionally, source/drain salicidation may beconducted. Further, low temperature backend processes may be utilized toprovide additional integrated circuit connections, and/or to activatedopant.

The memory array of FIGS. 23 and 24 may be electrically coupled toaccess lines extending across the array, as shown in FIGS. 25 and 26.More specifically, a first set of conductive pedestals 142 connectsource regions 132 to a source interconnect line 140, and a second setof conductive pedestals 144 connect drain regions 134 to a draininterconnect line 146. The conductive pedestals 142 may be referred toas source interconnect pedestals, and the conductive pedestals 144 maybe referred to as drain interconnect pedestals. Pedestals 142 and 144may be fabricated at the same process step as one another. In someembodiments (not shown) pedestals 142 and 144 may be the same height asone another.

As discussed previously, the terms “source” and “drain” are relative toone another, and the regions corresponding to sources at the programmingstage of FIGS. 25 and 26 may correspond to drains at a differentprogramming stage.

The source and drain interconnect lines are not shown in FIG. 26, butrather the cross-section is taken through a location which illustratesan example shape for the source interconnect pedestals 142 and the draininterconnect pedestals 144. Specifically, individual source interconnectpedestals 142 may extend across a pair of source regions from adjacentrows, and similarly individual drain interconnect pedestals 144 mayextend across a pair of drain regions from adjacent rows.Interconnection of the source interconnect pedestals to underlyingsource regions is diagrammatically illustrated by dashed-lineinterconnect regions 143, and interconnection of the drain interconnectpedestals to underlying drain regions is diagrammatically illustrated bydashed-line interconnect regions 145.

The source interconnect pedestals are each shared by two source regions,and similarly the drain interconnect pedestals are each shared by twodrain regions. The utilization of shared source interconnect pedestalsand shared drain interconnect pedestals may enable high integration insome embodiments.

FIG. 27 is a view of the plan layout of FIG. 26 from an elevation abovethe source lines 140 and drain lines 146. Such shows the source lines140 and drain lines 146 extending parallel to one another across thearray, and orthogonally to the gatelines 120, 122 and 124. Electricalconnections from the source interconnect pedestals 142 to the sourcelines 140 are diagrammatically illustrated by locations 147; andsimilarly electrical connections from the drain interconnect pedestals144 to the drain lines 146 are diagrammatically illustrated by locations149. The spacers 19 (FIG. 26) are not shown in FIG. 27 to simplify thedrawing.

The plan layout of FIG. 27 utilizes electrical flow through threedifferent lines to uniquely identify each memory cell of the array.Specifically, a source interconnect line, drain interconnect line, andgateline are all utilized to uniquely identify a memory cell. The layoutthus utilizes one additional line for unique identification of thememory cells than is utilized in traditional DRAM (in which a bitlineand wordline are used for unique identification of a memory cell).

FIG. 28 is a top view of another plan layout for accessing memory cellsof the types described in FIGS. 1-9. Identical numbering is utilized todescribe FIG. 28 as is used to describe FIGS. 25-27.

The plan layout of FIG. 28 shows the source and drain lines 140 and 146zigzagging across the array of memory cells; and illustrates locations143 and 145 where the source lines and drain lines, respectively,connect with source and drain regions, respectively. The layout of FIG.28 may alleviate utilization of pedestals connecting adjacent drainregions or source regions to one another, relative to the layout of FIG.27. However, the layout of FIG. 28 still utilizes electrical flowthrough all of a source interconnect line, a drain interconnect line,and a gateline to uniquely identify a memory cell.

FIG. 29 is a top view of another plan layout for accessing memory cellsof the types described in FIGS. 1-9. Identical numbering is utilized todescribe FIG. 29 as is used to describe FIGS. 25-27.

The plan layout of FIG. 29 shows the drain lines 146 extendingdiagonally across the array of memory cells, and illustrates locations145 where the drain lines connect with the drain regions 134. No sourceinterconnect lines are shown in the layout of FIG. 29 because all of thesource regions are electrically grounded (or biased to a constantvoltage). Such grounding (or constant voltage biasing) may occur throughlines extending between and parallel to the drain lines (not shown), orthrough connections under the source regions. The layout of FIG. 29 mayutilize electrical flow through only two lines (specifically, a draininterconnect line and a gateline) to uniquely identify a memory cell.

An advantage of the memory cell constructions utilizing phase changematerial in the channel regions of FETs is that the memory cells may beincorporated into three-dimensional arrangements of stacked memoryarrays. FIG. 30 shows a construction 200 comprising an example stackedconfiguration of a pair of memory arrays 230 and 240. FIG. 30 will bedescribed utilizing the same numbering as is used above to describevarious of FIGS. 1-29, where appropriate.

The lower memory array 230 is formed over a semiconductor base 52. Thelower memory array comprises a plurality of FETs that contain phasechange material 12 within their channel regions 24. The FETs are shownto comprise source regions 20 and drain regions 22, which are connectedto source interconnect lines 140 and drain interconnect lines 146,respectively.

An electrically insulative material 202 is formed over the first memoryarray. Electrically insulative material 202 may comprise any suitablecomposition or combination compositions; and may, for example, comprise,consist essentially of, or consist of silicon dioxide.

The second memory array 240 is formed over insulative material 202. Morespecifically, a semiconductor base material 204 is formed, phase changematerial 12 is formed within the base material, and the FETS of memoryarray 240 are formed to comprise the phase change material withinchannel regions 24. The sources 20 and drains 22 of the second memoryarray 240 may be connected to source interconnect lines (not shown) anddrain interconnect lines (not shown) analogous to the lines 140 and 146.

Among the advantages of some of the embodiments of PCRAM constructionsprovided herein relative to conventional PCRAM constructions are thatthe embedding of data storage capability in PCRAM transistors mayeliminate process steps relative to conventional processing. Also, someof the PCRAM embodiments disclosed herein may be highly scalable.Channel current density is utilized to determine self-heating near adrain, and such may be conducted regardless of the channel width of aFET. Additionally, some of the PCRAM embodiments disclosed herein may benonvolatile, and may have low power consumption. The programming may beconducted utilizing self-heating, which may eliminate a heater utilizedin some conventional PCRAM constructions. The hot electron-hole pairsmay not only create the heat utilized for programming, but may alsoreduce melting temperature and crystallization temperature of phasechange material. The reduced melting and crystallization temperaturesprovide synergistic effects to the utilization of hot carriers forprogramming, and such synergistic effects may be taken advantage of insome embodiments disclosed herein. The continuous parallel active areastripes of, for example, the construction of FIGS. 23 and 24 maysimplify photo patterning and dry etching relative to other layouts.Additionally, the formation of isolation material along parallel linesmay simplify formation of the isolation material relative to otherlayouts.

The memory cells and memory cell arrays discussed above may beincorporated into electronic systems, such as computer systems, carelectrical systems, cellular phones, cameras, etc.

FIG. 31 illustrates an embodiment of a computer system 400. Computersystem 400 includes a monitor 401 or other communication output device,a keyboard 402 or other communication input device, and a motherboard404. Motherboard 404 may carry a microprocessor 406 or other dataprocessing unit, and at least one memory device 408. Memory device 408may comprise an array of memory cells, and such array may be coupledwith addressing circuitry for accessing individual memory cells in thearray. Further, the memory cell array may be coupled to a read circuitfor reading data from the memory cells. The addressing and readcircuitry may be utilized for conveying information between memorydevice 408 and processor 406. Such is illustrated in the block diagramof the motherboard 404 shown in FIG. 32. In such block diagram, theaddressing circuitry is illustrated as 410 and the read circuitry isillustrated as 412.

Processor device 406 may correspond to a processor module, andassociated memory utilized with the module may comprise PCRAM.

Memory device 408 may correspond to a memory module, and may comprisePCRAM.

FIG. 33 illustrates a simplified block diagram of a high-levelorganization of an electronic system 700. System 700 may correspond to,for example, a computer system, a process control system, or any othersystem that employs a processor and associated memory. Electronic system700 has functional elements, including a processor 702, a control unit704, a memory device unit 706 and an input/output (I/O) device 708 (itis to be understood that the system may have a plurality of processors,control units, memory device units and/or I/O devices in variousembodiments). Generally, electronic system 700 will have a native set ofinstructions that specify operations to be performed on data by theprocessor 702 and other interactions between the processor 702, thememory device unit 706 and the I/O device 708. The control unit 704coordinates all operations of the processor 702, the memory device 706and the I/O device 708 by continuously cycling through a set ofoperations that cause instructions to be fetched from the memory device706 and executed. The memory device 706 may include PCRAM.

FIG. 34 is a simplified block diagram of an electronic system 800. Thesystem 800 includes a memory device 802 that has an array of memorycells 804, address decoder 806, row access circuitry 808, column accesscircuitry 810, read/write control circuitry 812 for controllingoperations, and input/output circuitry 814. The memory device 802further includes power circuitry 816, and sensors 820, such as currentsensors for determining whether a memory cell is in a low-resistivityconducting state or in a high-resistivity less-conducting state. Theillustrated power circuitry 816 includes power supply circuitry 880,circuitry 882 for providing a reference voltage, circuitry 884 forproviding a first source/drain interconnection line with pulses,circuitry 886 for providing a second source/drain interconnection linewith pulses, and circuitry 888 for providing a wordline with pulses. Thesystem 800 also includes a processor 822, or memory controller formemory accessing.

The memory device 802 receives control signals from the processor 822over wiring or metallization lines. The memory device 802 is used tostore data which is accessed via I/O lines. At least one of theprocessor 822 or memory device 802 may include PCRAM.

The various electronic systems may be fabricated in single-packageprocessing units, or even on a single semiconductor chip, in order toreduce the communication time between the processor and the memorydevice(s).

The electronic systems may be used in memory modules, device drivers,power modules, communication modems, processor modules, andapplication-specific modules, and may include multilayer, multichipmodules.

The electronic systems may be any of a broad range of systems, such asclocks, televisions, cell phones, personal computers, automobiles,industrial control systems, aircraft, etc.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of programming a memory cell, comprising: providing a memorycell which contains a transistor; the transistor including a transistorgate spaced from a channel region by a gate dielectric, including afirst source/drain region on one side of the channel region, andincluding a second source/drain region on an opposing side of thechannel region from the first source/drain region; utilizing the firstsource/drain region as a source and the second source/drain region as adrain to induce one memory state of the memory cell; and utilizing thesecond source/drain region as a source and the first source/drain regionas a drain to induce another memory state of the memory cell.
 2. Themethod of claim 1 wherein: the channel region comprises a first volumeof programmable material adjacent the first source/drain region, and thechannel region comprises a second volume of programmable materialadjacent the second source/drain region.
 3. A method of forming aprogrammed memory cell, comprising: forming a transistor which includesa transistor gate spaced from a channel region by a gate dielectric, andwhich includes a source region on one side of the channel region and adrain region on an opposing side of the channel region from the sourceregion; wherein the channel region comprises phase change materialadjacent the drain region; forming an inversion layer within the channelregion adjacent the gate dielectric, the inversion layer having apinch-off region within the phase change material adjacent the drainregion; and utilizing hot carriers within the pinch-off region to changea phase within the phase change material.
 4. The method of claim 3wherein the change in phase decreases crystallinity of the phase changematerial.
 5. The method of claim 3 wherein the change in phase increasescrystallinity of the phase change material.
 6. The method of claim 3wherein the hot carriers are electrons.
 7. The method of claim 3 whereinthe hot carriers are holes.
 8. The method of claim 3 wherein the phasechange material extends throughout an entirety of the channel region. 9.The method of claim 3 wherein the channel region primarily comprisesnon-phase change semiconductor material, and comprises the phase changematerial only adjacent the drain region.
 10. A method of forming aprogrammed memory cell, comprising: forming a transistor which includesa transistor gate spaced from a channel region by a gate dielectric, andwhich includes a first source/drain region on one side of the channelregion and a second source/drain region on an opposing side of thechannel region from the first source/drain region; wherein the channelregion comprises a first volume of programmable material adjacent thefirst source/drain region, and comprises a second volume of programmablematerial adjacent the second source/drain region; forming a firstinversion layer within the channel region adjacent the gate dielectric,the first inversion layer having a first pinch-off region within thefirst volume of programmable material; utilizing hot carriers within thefirst pinch-off region to change a phase within the first volume ofprogrammable material and thereby achieve a first memory state; forminga second inversion layer within the channel region adjacent the gatedielectric, the second inversion layer having a second pinch-off regionwithin the second volume of programmable material; and utilizing hotcarriers within the second pinch-off region to change a phase within thesecond volume of programmable material and thereby achieve a secondmemory state.
 11. The method of claim 10 wherein the hot carriers areelectrons.
 12. The method of claim 10 wherein the first and secondvolumes of programmable materials consist of phase change material, andare of a common composition to one another.
 13. A method of forming amemory cell, comprising: forming a gate dielectric over asilicon-containing substrate; forming a gate over the gate dielectric,the gate having a pair of opposing sidewalls; etching into the substrateadjacent only one of the sidewalls to form a recess in the substrate;forming phase change material within the recess; forming a pair ofspacers along the opposing sidewalls of the gate; implanting dopant intothe substrate while using the gate and spacers as a mask, the implanteddopant forming a pair of source/drain regions within the substrate; oneof the source/drain regions being adjacent the phase change material.14. A method of forming a memory cell, comprising: forming a gate stackover a semiconductor base; the gate stack comprising, in ascending orderfrom the base, gate dielectric material, electrically conductive gatematerial, and an electrically insulative capping material; the gatestack having a pair of opposing sidewalls; forming a pair of sidewallspacers along the pair of opposing sidewalls; forming a mask over thebase along one side of the gate stack, and not over a region of the basealong another side of the gate stack in opposing relation to said oneside; etching into said region of the base to form an opening, theopening extending to under one of the sidewall spacers; forming phasechange material within the opening and under said one of the sidewallspacers to partially fill the opening; after forming the phase changematerial, epitaxially growing semiconductor material within the opening;and forming a pair of source/drain regions, one of the source/drainregions extending into the epitaxially-grown semiconductor material andthe other being within the semiconductor base on an opposing side of thegate stack from said one of the source/drain regions.
 15. A method offorming a memory cell, comprising: forming a gate dielectric over asilicon-containing substrate; forming a gate over the gate dielectric,the gate having a pair of opposing sidewalls; etching into the substrateadjacent the sidewalls to form a pair of recesses in the substrate;forming phase change material within the recesses; forming a pair ofspacers along the opposing sidewalls of the gate and directly over thephase change material within the recesses; implanting dopant into thesubstrate while using the gate and spacers as a mask, the implanteddopant forming a pair of source/drain regions within the substrate. 16.A method of forming a memory cell, comprising: forming a gate dielectricover a silicon-containing substrate; forming a gate over the gatedielectric, the gate having a pair of opposing sidewalls; forming a pairof spacers along the opposing sidewalls of the gate; the spacerscomprising sacrificial material vertically sandwiched betweennon-sacrificial material; removing the sacrificial material to formopenings extending to the substrate; etching into the substrate withinthe openings to form recesses in the substrate; forming phase changematerial within the recesses; filling the openings with non-sacrificialmaterial; and implanting dopant into the substrate to form a pair ofsource/drain regions, with said source/drain regions being on opposingsides of the gate from one another.
 17. (canceled)
 18. A memory cell,comprising: a transistor which includes a transistor gate spaced from achannel region by a gate dielectric, and which includes a source regionon one side of the channel region and a drain region on an opposing sideof the channel region from the source region; and wherein the channelregion comprises phase change material adjacent the drain region. 19-20.(canceled)
 21. A memory cell, comprising: a transistor which includes atransistor gate spaced from a channel region by a gate dielectric, andwhich includes a first source/drain region on one side of the channelregion and a second source/drain region on an opposing side of thechannel region from the first source/drain region; wherein the channelregion comprises a phase change material adjacent the first source/drainregion; and wherein the channel region comprises the phase changematerial adjacent the second source/drain region. 22-23. (canceled) 24.A memory cell, comprising: a gate dielectric over a silicon-containingsubstrate; a gate over the gate dielectric, the gate having a pair ofopposing sidewalls; a pair of spacers along the opposing sidewalls ofthe gate; phase change material extending into the substrate and beingdirectly beneath only one of the spacers; a pair of source/drain regionswithin the substrate on opposing sides of the gate; one of thesource/drain regions being directly adjacent the phase change material;and a channel region between the source/drain regions, the channelregion comprising silicon of the silicon-containing substrate. 25-26.(canceled)
 27. A memory cell, comprising: a gate dielectric over asilicon-containing substrate; a gate over the gate dielectric, the gatehaving a pair of opposing sidewalls; a pair of spacers along theopposing sidewalls of the gate; a pair of phase change material regionsextending into the substrate, one of the phase change material regionsbeing directly beneath one of the spacers, and the other of the phasechange material regions being directly beneath the other of the spacers;a pair of source/drain regions within the substrate; one of thesource/drain regions being directly adjacent said one of the phasechange material regions, and the other of the source/drain regions beingdirectly adjacent said other of the phase change material regions; and achannel region between the source/drain regions, the channel regioncomprising silicon of the silicon-containing substrate. 28-29.(canceled)